Robust devices – self clamping gate instead of Schottky gate structure.5V gate drive, very low gate drive losses.Very low QG compared to equivalent silicon MOSFET.Low almost linear COSS without large increase at low VDS enables ZVS operation over wide load impedance range.Gallium Nitride CoolGaN™ emode HEMTs enable optimal tuning in class E amplifiers especially above 30W, and offers major advantages over silicon in 6.78MHz wireless charging. This advantage can be realized by implementing CoolGaN™ in a half-bridge topology that enables increased switching frequency and efficiency simultaneously. Infineon’s CoolGaN™ is a breakthrough for adapter and charger systems, enabling ~20W/in3 power density (for 65W maximum output power). Infineon’s gallium nitride CoolGaN™ solution addresses these challenges by providing benchmark efficiency in the entire operation range, maximizing power density while following Infineon’s stringent qualification regime. Operating expense (OPEX) and capital expenditure (CAPEX) savings, overall reduction of power supply footprint and highest solution robustness have been and will remain in the focus of telecommunication infrastructure development. GaN based SMPS solutions enable more compute power per rack by pushing the power density to >80W/in3 from today’s typical ~30.40 W/in3 of silicon based solutions. By implementing gallium nitride CoolGaN™ e-mode HEMTs in a totem pole PFC combined with a LLC DC-DC stage, >98.5% system efficiency can be achieved (for 48V output voltage systems) providing a total of 2 billion kWh annual savings for US data centers (~ 300 million USD annual savings 0.15 USD/kWh).
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